V (BR)DSS (sometimes called BVDSS) is the drain-source voltage at which no more than the specified drain current will flow at the specified temperature and with zero gate-source voltage. This tracks ...
A new approach to designing a synchronous rectifier will help engineers unlock efficiency gains that extend beyond ...
Power MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and ...
Linear Integrated Systems announced the LSK489, an N-channel monolithic dual JFET with 1.8 nV per square root Hz noise at 1kHz and low-capacitance (Ciss= 4pF) . This lower capacitance will greatly ...
As the technology node decreases, meeting inter-wire or coupling capacitance becomes extremely critical and challenging in SOC design. Shrinking technology node leads to increase in dielectric values, ...
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