Scientists have developed a new way to read the hidden states of Majorana qubits, which store information in paired quantum modes that resist noise. The results confirm their protected nature and show ...

From smartphone charging to hydrogen production, the fundamental principles of energy technology have been revealed. Korean researchers have, for the first time, identified how molecular structures ...

Abstract: Electrical Capacitance Tomography (ECT) is a non-destructive visual measurement technology, which is mainly used in the detection of two-phase flow and multi-phase flow. In this paper, ...

Capacitive displacement sensors span a wide range of resolution, from the touchscreen sensors which can only detect displacement as a binary state, all the way to the sensors in semiconductor fabs ...

The race to build reliable quantum computers is fraught with obstacles, and one of the most difficult to overcome is related to the promising but elusive Majorana qubits. Now, an international team ...

Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China State Key Laboratory of Optoelectronic Materials and ...

Abstract: High-frequency inductors are important devices in power converters. The parasitic capacitance not only affects the electromagnetic interference suppression effect of filter inductors, but ...

Using the toilet to excrete is important, which is a matter of human dignity. However, incontinent and bedridden elderly people who are unable to go to the toilet use disposable adult diapers. In this ...

The mesenteric venous reservoir plays a vital role in mediating blood volume and pressure changes and is richly innervated by sympathetic nerves; however, the precise nature of venous sympathetic ...

Guided by machine learning, chemists at the Department of Energy’s Oak Ridge National Laboratory designed a record-setting carbonaceous supercapacitor material that stores four times more energy than ...

The article focuses on the gate all around field effect transistor (GAA-FET) as a replacement for Fin field effect transistor (FinFET) in 3 nm technology node and beyond due to its SCE constraint ...