TP5.0SMD-FL FlatSuppressX TVS diodes from Littelfuse. The TP5.0SMD-FL TVS diodes protect sensitive electronic equipment from voltage transients caused by lightning and other voltage transient events.

Abstract: Converter topologies such as current-source rectifiers and inverters require switching devices with bipolar voltage blocking and unidirectional current conduction capability. Recently ...

† SKKU Advanced Institute of Nanotechnology (SAINT) and ‡ School of Chemical Engineering, Sungkyunkwan University, Suwon 440−746, Korea § Department of Organic and Nano System Engineering, Konkuk ...

ST has announced two new high-speed half-bridge gate drivers that bring GaN efficiency, thermal performance, and miniaturisation to a broad range of power and motion-control applications. The ...

Abstract: A novel application of mode-locked laser diodes (MLLD's) for all-optical gate is described, A saturable absorber (SA) shows 8-ps-absorption recovery and has a small switching energy of 0.9 ...

The fun part about logic gates is that there are so many ways to make them, with each approach having its own advantages and disadvantages. Although these days transistor-transistor logic (TTL) is the ...

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

Transient spikes can be caused by lightning strikes, nearby machinery, power surges from load switching, etc. An example is a modern automobile where ever-increasing on-board electronics are connected ...

Logic gates process data and generate outputs using Boolean algebra and truth tables (Figure 1) to define operations for all binary input combinations: 0 (false, low) and 1 (true, high). Figure 1. A ...

Diodes are fundamental building blocks in electronics, playing a vital role in controlling current flow, protecting circuits and enabling various functionalities. Because of their one-direction ...

Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...