Consider a neural implant dubbed the Microscale Optoelectronic Tetherless Electrode, or MOTE, developed at Cornell University ...

A thin layer of blood may seem an unlikely surgical innovation. But in this case, it turns a biological fluid into an optical ...

President Lee Jae Myung attended the “Chungcheong Region Advanced Industry Development Vision National Briefing” held in Asan ...

Device based on two-dimensional oxide interface superconductors can be “edited” using atomic force microscope lithography ...

Management introduced three-year financial targets, aiming for $2 billion annual revenue, $700 million gross profit, and over $4 non-GAAP EPS. Leadership identified design wins and new product ...

Good afternoon, and welcome to Diodes Incorporated's First Quarter 2026 Financial Results Conference Call. [Operator Instructions] As a reminder, this conference call is being recorded today, Thursday ...

Abstract: The modeling and parameter extraction of the anti-parallel GaAs Schottky diode for terahertz monolithic-integrated circuit (TMIC) design is proposed in this article. The main advantage is ...

Abstract: The modular multilevel converter (MMC or M2C) is an emerging attractive multilevel topology for medium-voltage high-power applications. The capacitor voltage balancing control and the ...

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

Infineon Technologies has launched what it says is the world’s first industrial gallium nitride (GaN) transistor with an integrated Schottky diode for hard-switching power applications GaN-based ...